Quantum Well Intermixing Revolutionizes High Power Laser Diodes

High-Power Pure Blue InGaN Laser Diodes

We fabricated high-power pure blue laser diodes (LDs) by using GaN-based material for full-color laser display. The operating output power, voltage and wall-plug efficiency of the LDs at forward current of 1.0 A were 1.17 W, 4.81 V and 24.3%, respectively. The estimated lifetime of the LDs was over 30,000 hours under continuous-wave operation. key words: InGaN, GaN, high-power laser, blue LD

Quantum well intermixing in GaInNAs/GaAs structures

Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes

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Laser Revolutionizes Industrial Welding

Special attention has been focused on creating an ergonomic operator station that is not intimidating. This guarantees fast and efficient work, without fatigue, for many hours. The operator sits in front of the welder and manually loads parts to be welded into the enclosure. The operator has a clear view of the processing area through a large laser-safe window of protective glass. The final pos...

Dual wavelength single waveguide laser diode fabricated using selective area quantum well intermixing

A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiOxNy) and silicon dioxide (SiO2), respectively. Th...